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APTGF25X120T3G
3 Phase bridge NPT IGBT Power Module
15 16 19 20 18 23 25 29 14 30 22 28 R1 31
VCES = 1200V IC = 25A @ Tc = 80C
Application * Motor control Features * Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS compliant
11 10 12
8 7
4 3 2 13
It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together.
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1200 40 25 100 20 208 50A@1150V Unit V A
July, 2007 1-6 APTGF25X120T3G - Rev 0
V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF25X120T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V VCE = 1200V Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 25A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ Max 250 500 3.7 6 400 Unit A V V nA
2.5 4
3.2 4.0
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 600V IC =25A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 25A RG = 22 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 25A RG = 22 VGE = 15V Tj = 125C VBus = 600V IC = 25A Tj = 125C RG = 22 Min Typ 1650 250 110 160 10 70 60 50 305 30 60 50 346 40 3.5 mJ 1.5 Max Unit pF
nC
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V di/dt =200A/s
Min 1200
Typ
Max 100 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=1200V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Qrr
Reverse Recovery Charge
1700
nC
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APTGF25X120T3G - Rev 0
trr
Reverse Recovery Time
300 380 360
ns
July, 2007
30 2.6 3.2 1.8
3.1 V
APTGF25X120T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Resistance @ 25C R25 B 25/85 T25 = 298.15 K
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 3952
Max
Unit k K
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.6 1.2 150 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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28
APTGF25X120T3G
Typical Performance Curve
80 Ic, Collector Current (A) 70 60 50 40 30 20 10 0 0 2 3 4 5 6 7 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V)
250s Pulse Test < 0.5% Duty cycle TJ=125C
Output characteristics (VGE=15V) Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle TJ=25C
20 16 12 8 4 0
Output Characteristics (VGE=10V)
250s Pulse Test < 0.5% Duty cycle
TJ=25C
TJ=125C
1
8
0
0.5
1
1.5
2
2.5
3
3.5
VCE, Collector to Emitter Voltage (V) Gate Charge
IC = 25A TJ = 25C VCE=240V VCE=600V
120
Ic, Collector Current (A)
18 16 14 12 10 8 6 4 2 0 0
100 80 60 40
VCE=960V
TJ=125C
20 0 0
TJ=25C
2.5 5 7.5 10 12.5 VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 125C 250s Pulse Test < 0.5% Duty cycle
15
30
60
90
120
150
180
Gate Charge (nC) On state Voltage vs Junction Temperature
250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=50A Ic=25A
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
9 8 7 6 5 4 3 2 1 0 9
6 5 4 3 2 1 0
Ic=50A
Ic=25A
Ic=12.5A
Ic=12.5A
10
11
12
13
14
15
16
-50
VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.10 Ic, DC Collector Current (A) 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C)
-25 0 25 50 75 100 TJ, Junction Temperature (C)
125
60 50 40
DC Collector Current vs Case Temperature
20 10 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C)
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APTGF25X120T3G
Turn-On Delay Time vs Collector Current
VCE = 600V RG = 22
Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
75 70 65 60 55 50 5 15 25 35 45 55 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 160
VCE = 600V RG = 22
400
VGE=15V, TJ=125C
350
VGE = 15V
300
VGE=15V, TJ=25C
250
VCE = 600V RG = 22
200 5 15 25 35 45 55
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current 50 45
TJ = 125C
tr, Rise Time (ns)
tf, Fall Time (ns)
120
40 35 30 25
TJ = 25C
80
VGE=15V
40
VCE = 600V, VGE = 15V, RG = 22
0 5 15 25 35 45 55 ICE, Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current
VCE = 600V RG = 22
20 5 15 25 35 45 ICE, Collector to Emitter Current (A) 55
Turn-Off Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ) 4
VCE = 600V VGE = 15V RG = 22 TJ = 125C
Eon, Turn-On Energy Loss (mJ)
10 8 6 4 2 0 5
TJ=125C, VGE=15V
3
TJ=25C, VGE=15V
2
TJ = 25C
1
0
15 25 35 45 ICE, Collector to Emitter Current (A)
55
5
15 25 35 45 ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area
55
Switching Energy Losses (mJ)
5 4 3 2 1 0
Switching Energy Losses vs Gate Resistance
VCE = 600V VGE = 15V TJ= 125C
60 IC, Collector Current (A)
Eon, 25A
50 40 30
Eoff, 25A
10 0
Gate Resistance (Ohms)
VCE, Collector to Emitter Voltage (V)
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APTGF25X120T3G - Rev 0
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10
20
30
40
50
60
0
400
800
1200
July, 2007
20
APTGF25X120T3G
Capacitance vs Collector to Emitter Voltage 10000 Fmax, Operating Frequency (kHz)
Cies
Operating Frequency vs Collector Current 120 100 80 60 40 20 0 0 10 20 30 IC, Collector Current (A) 40
Hard switching VCE = 600V D = 50% RG = 22 TJ = 125C TC= 75C
C, Capacitance (pF)
1000
Coes
100
Cres
10 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50
0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1
0.5 0.3 0.1 0.05 0.9 0.7
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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